Specifications VDSS Drain Source Voltage 800 V ID Continuous Drain Current 25 A IDM Pulsed Drain Current 1 100 A VGS Gate Source Voltage ±30 V VGSM Gate Source Voltage Transient ±40 PD Total Power Dissipation @ Tcase =...
SML80J25: Specifications VDSS Drain Source Voltage 800 V ID Continuous Drain Current 25 A IDM Pulsed Drain Current 1 100 A VGS Gate Source Voltage ±30 ...
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Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
|
VDSS |
Drain Source Voltage |
800 |
V |
|
ID |
Continuous Drain Current |
25 |
A |
|
IDM |
Pulsed Drain Current 1 |
100 |
A |
|
VGS |
Gate Source Voltage |
±30 |
V |
|
VGSM |
Gate Source Voltage Transient |
±40 | |
|
PD |
Total Power Dissipation @ Tcase = 25°C |
450 |
W |
|
Derate Linearly |
3.6 |
W/°C | |
|
TJ , TSTG |
Operating and Storage Junction Temperature Range |
55 to 150 |
°C |
|
TL |
Lead Temperature : 0.063" from Case for 10 Sec. |
300 | |
|
IAR |
Avalanche Current1 (Repetitive and Non-Repetitive) |
25 |
A |
|
EAR |
Repetitive Avalanche Energy 1 |
50 |
mJ |
|
EAS |
Single Pulse Avalanche Energy |
2500 |