Features: Low Distortion Design Frequency Range from HF to > 2 GHz Designed for Base Station Applications Configured for PI and TEE AttenuatorsSpecifications Characteristic Value Reverse Voltage (VR) 200 V Power Dissipation @ 25°C LeadTemperature (PD) 250 mW Storage Temperature...
SMP1304-019: Features: Low Distortion Design Frequency Range from HF to > 2 GHz Designed for Base Station Applications Configured for PI and TEE AttenuatorsSpecifications Characteristic Value Reverse...
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Features: • HIGH SENSITIVITY• PHOTODIODE ISOLATED FROM PACKAGE• EXCELLENT LINEAR...
| Characteristic | Value |
| Reverse Voltage (VR) | 200 V |
| Power Dissipation @ 25°C Lead Temperature (PD) |
250 mW |
| Storage Temperature (TST) | -65 to +150 |
| Operating Temperature (TOP) | -65to +150 |
| ESD Human Body Model | Class 1A |
The SMP1304 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 100 µm I region of these PIN diodes makes SMP1304 series very attractive for use in low distortion PI and TEE attenuators commonly used in TV distribution applications. The 1 µS typical carrier lifetime of these SMP1304 series diodes results in resistance of 20 Ω maximum at 1 mA and 7 Ω maximum at 10 mA. Available in a selection of plastic packages: as a single diode in the small footprint SOD-323 package and in a variety of configurations in the SOT-23 package, including a low inductance (0.4 nH) SMP1304-007 package. Also available in the SOT-143 package are three diode junctions designed for insertion in TEE attenuators (SMP1304-018) and PI attenuators (SMP1304-019). Also available in a SOT-5 (SMP1304-027) package as a four diode array designed for insertion in the commonly used 4 diode PI attenuator circuit.