SMP40N10

Product summary of the SMP40N10 are:(1)the V(BR)DSS is 100V;(2)the rDS(on) is 0.040;(3)the ID is 40A.

The absolute maximum ratings of the SMP40N10 can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDS,the limit is 100,the unit is V;(2):the parameter is gate-source voltage,the symbol is VGS,the limit is ±20,the unit is V;(3):the parameter is continuous drain current TC=25,the symbol is ID,the limit is 40,the unit is A;(4):the parameter is continuous drain current TC=100,the symbol is ID,the limit is 25,the unit is A;(5):the parameter is pulsed drain current,the symbol is IDM,the limit is 160,the unit is A;(6):the parameter is avalanche current,the symbol is IAR,the limit is 40,the unit is A;(7):the parameter is avalanche energy L=0.3 mH,the symbol is EA,the limit is 240,the unit is mJ;(8):the parameter is repetitive avalanche energy L=0.05 mH,the symbol is EAR,the limit is 40,the unit is mJ;(9):the parameter is power dissipation TC=25,the symbol is PD,the limit is 125,the unit is W;(10):the parameter is power dissipation TC=100,the symbol is PD,the limit is 60,the unit is W;(11):the parameter is operating junction and storage temperature range,the symbol is TJ,Tstg,the limit is -55 to 150,the unit is ;(12):the parameter is lead temperature (1/16" from case for 10 sec.),the symbol is TL,the limit is 300,the unit is .

The thermal resistance ratings of the SMP40N10 can be summarized as:(1):the parameter is junction-to-ambient,the symbol is RthJA,the limit is 80,the unit is /W;(2):the parameter is junction-to-case,the symbol is RthJC,the limit is 1.0,the unit is /W;(3):the parameter is case-to-sink,the symbol is RthCS,the limit is1.0,the unit is /W.