SMP60N03-10L

DescriptionThe SMP60N03-10L is designed as N-channel 30V (D-S), 150°C MOSFET with logic levels.Some absolute maximum ratings of SMP60N03-10Lhave been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be +/-20V. (3)Its continuo...

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SeekIC No. : 004495469 Detail

SMP60N03-10L: DescriptionThe SMP60N03-10L is designed as N-channel 30V (D-S), 150°C MOSFET with logic levels.Some absolute maximum ratings of SMP60N03-10Lhave been concluded into several points as follow. (1)Its ...

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Part Number:
SMP60N03-10L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Description

The SMP60N03-10L is designed as N-channel 30V (D-S), 150°C MOSFET with logic levels.

Some absolute maximum ratings of SMP60N03-10L have been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current would be 60A at Tc=25°C and would be 51A at Tc=100°C. (4)Its pulsed drain current would be 240A. (5)Its avalanche current would be 60A. (6)Its avalanche energy would be 180mJ. (7)Its repetitive avalanche energy would be 90mJ. (8)Its power dissipation would be 105W at Tc=25°C and would be 42W at Tc=100°C. (9)Its operating junction temperature range would be from -55°C to 150°C. (10)Its storage temperature range would be from -55°C to 150°C. (11)Its lead temperature (1/16 from case for 10 seconds) would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some thermal resistance ratings of SMP60N03-10L are concluded as follow. (1)Its junction to ambient would be max 80°C/W. (2)Its junction to case would be max 1.2°C/W. (3)Its case to sink would be typical 1.0°C/W. Those are all the main ratings.

And some electrical specifications of SMP60N03-10L are concluded as follow. (1)Its drain to source breakdown voltage would be min 30V. (2)Its gate threshold voltage would be min 0.8V and max 3.0V. (3)Its gate-body leakage would be max +/-500nA. (4)Its zero gate voltage drain current would be max 25uA and would be max 250uA at 125°C. (5)Its on-state drain current would be min 60A. (6)Its drain-source on-state resistance would be typ 0.007 and max 0.010 at Vgs=10V and would be typ 0.010 and max 0.015 at Vgs=5V and it would be typ 0.009 and max 0.014 at Vgs=10V, 125°C. (7)Its forward transconductance would be typ 45S. (8)Its input capacitance would be typ 2600pF. (9)Its output capacitance would be typ 1500pF. (10)Its reverse transfer capacitance would be typ 750pF. And so on. If you have any question or suggestion or want to know more information of SMP60N03-10L please contact us for details. Thank you!




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