SMP60N06-18

The SMP60N06-18 is a kind of N-channel enhancement-mode transistor.

What comes next is about the absolute maximum ratings of SMP60N06-18(TC=25 unless otherwise noted): (1)gate-source voltage, VGS: ±20 V; (2)continuous drain current, ID: 60 A at TC=25 and 41 A at TC=100; (3)pulsed drain current, IDM: 240 A; (4)avalanche current, IAR: 60 A; (5)avalanche energy, EAR: 180 mJ when L=0.1 mH; (6)repetitive avalanche energy, EAR: 90 mJ when L=0.1 mH; (7)power dissipation, PD: 125 W at TC=25 and 62 W at TC=100; (8)operating junction and storage temperature range, TJ, Tstg: -55 to 175; (9)lead temperature (1/16" from case for 10 sec), TL: 300. Then is about the thermal resistance ratings: (1)junction-to-ambient, RthJA: 80/W max; (2)junction-to-case, RthJC: 1.2/W max; (3)case-to-sink, RthCS: 1.0/W max typ.

The following is about the static specifications of SMP60N06-18(TJ=25 unless otherwise noted): (1)drain-source breakdown voltage, V(BR)DSS: 60 V when VGS=0 V, ID=250A; (2)gate threshold voltage, VGS(th): 2.0 V min and 4.0 V max at VDS=VGS, IDS=1 mA; (3)gate-body leakage, IGSS: ±500 nA max at VDS=0 V, VGS=±20 V; (4)zero gate voltage drain current, IDSS: 25A max at VDS=48 V, VGS=0 V; 250A max at VDS=48 V, VGS=0 V, TJ=125; 500A max at VDS=48 V, VGS=0 V, TJ=175 ; (5)on-state drain current, ID(on): 60 A min at VDS=0 V, VGS=10 V; (6)forward transconductance, gfs: 45 S typ at VDS=15 V, ID=30 A.