SN54LVC00AD

The SN54LVC00AD is designed as a quadruple 2-input positive NAND gate for 2.7V to 3.5V Vcc operation. Inputs can be driven from either 3.3V or 5V devices. This feature allow the use of SN54LVC00AD as translators in a mixed 3.3V/5V system environment.

SN54LVC00AD has eight features. (1)EPIC (enhanced performance implanted CMOS) submicron process. (2)ESD protection exceeds 2000V per MIL-STD-883, method 3015; exceeds 200V using machine model (C=200pF, R=0). (3)Latch-up performance exceeds 250mA per JESD 17. (4)Typical Volp(output ground bounce)<0.8V at Vcc=3.3V. (5)Typical Vohv (output Voh undershoot)>2V at Vcc=3.3V. (7)INputs accept voltages to 5.5V. (8)Package options is plastic small-outline. Those are all the main features.

Some absolute maximum ratings of SN54LVC00AD have been concluded into several points as follow. (1)Its supply voltage range would be from -0.5V to 6.5V. (2)Its input voltage range would be from -0.5V to 6.5V. (3)Its output voltage range would be from -0.5V to Vcc+0.5V. (4)Its input clamp current would be -50mA. (5)Its output clamp current would be -50mA. (6)Its continuous output current would be +/-50mA. (7)Its continuous current through Vcc or GND would be +/-100mA. (8)Its package thermal impedance would be 127°C/W. (9)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SN54LVC00AD are concluded as follow. (1)Its output voltage high would be min Vcc-0.2V at Vcc=2.7V to 3.6V and would be min 2.2V at Vcc=2.7V. (2)Its output voltage low would be max 0.2V at Vcc=2.7V to 3.6V and would be max 0.4V at Vcc=2.7V. (3)Its input leakage current would be max +/-5uA. (4)Its input capacitance would be typ 5pF. (5)Its tPD would be max 5.1ns at Vcc=2.7V. And so on. If you have any question or suggestion or want to know more information about SN54LVC00AD please contact us for details. Thank you!