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SN54LVTH540

Features: · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation· Ioff and Power-Up 3-State Support Hot Insertion· Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors· Support Mixed-Mode Signal Operation (5...

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SeekIC No. : 004497216 Detail

SN54LVTH540: Features: · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation· Ioff and Power-Up 3-State Support Hot Insertion· Bus Hold on Data Inputs...

SN54LVTH540 Data Sheet

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Part Number:
SN54LVTH540
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· State-of-the-Art Advanced BiCMOS
  Technology (ABT) Design for 3.3-V
  Operation and Low Static-Power Dissipation
· Ioff and Power-Up 3-State Support Hot Insertion
· Bus Hold on Data Inputs Eliminates the
  Need for External Pullup/Pulldown Resistors
· Support Mixed-Mode Signal Operation (5-V
  Input and Output Voltages With 3.3-V VCC)
· Support Unregulated Battery Operation Down to 2.7 V
· Typical VOLP (Output Ground Bounce)
< 0.8 V at VCC = 3.3 V, TA = 25°C
· Latch-Up Performance Exceeds 500 mA Per JESD 17
· ESD Protection Exceeds 2000 V Per
  MIL-STD-883, Method 3015; Exceeds 200 V
  Using Machine Model (C = 200 pF, R = 0)
· Package Options Include Plastic
  Small-Outline (DW), Shrink Small-Outline
  (DB), and Thin Shrink Small-Outline (PW)
  Packages, Ceramic Chip Carriers (FK),
  Ceramic Flat (W) Package, and Ceramic (J) DIPs


Pinout

Connection Diagram


Specifications

Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to 4.6 V
Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to 7 V
Voltage range applied to any output in the high-impedance
or power-off state, VO (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to 7 V
Voltage range applied to any output in the high state, VO (see Note 1) . . . . . . . . . . . . . 0.5 V to VCC + 0.5 V
Current into any output in the low state, IO: SN54LVTH540 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 mA
SN74LVTH540 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 mA
Current into any output in the high state, IO (see Note 2): SN54LVTH540 . . . . . . . . . . . . . . . . . . . . . . . 48 mA
SN74LVTH540 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 mA
Input clamp current, IIK (VI < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output clamp current, IOK (VO < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 mA
Package thermal impedance, qJA (see Note 3): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .115°C/W
DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128°C/W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. This current flows only when the output is in the high state and VO > VCC.
3. The package thermal impedance is calculated in accordance with JESD 51.


Description

These octal buffers/drivers LVTH540 are designed specifically for low-voltage (3.3-V) VCC operation, but with the capability to provide a TTL interface to a 5-V system environment.

The 'LVTH540 devices are ideal for driving bus lines or buffer memory address registers. These devices feature inputs and outputs on opposite sides of the package that facilitate printed circuit board layout.

The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all outputs of LVTH540 are in the high-impedance state.

Active bus-hold circuitry of LVTH540 is provided to hold unused or floating data inputs at a valid logic level. When VCC is between 0 and 1.5 V, the devices are in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 1.5 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor LVTH540 is determined by the current-sinking capability of the driver.

LVTH540 is fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the LVTH540 when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.




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