SN64BCT2827C

• State-of-the-Art BiCMOS Design Significantly Reduces I_CCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• High-Impedance State During Power Up and Power Down
• 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers
• Flow-Through Architecture Optimizes PCB Layout
• Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil DIPs (NT)

This 10-bit buffer and bus/MOS SN64BCT2827C driver provides a high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate of SN64BCT2827C is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs of SN64BCT2827C remain in the high-impedance state while the device is powered down.

The outputs, SN64BCT2827C is designed to source or sink up to 12 mA, include 33-W series resistors SN64BCT2827C to reduce overshoot and undershoot.

The SN64BCT2827C is characterized for operation from 40°C to 85°C and 0°C to 70°C.