Features: State-of-the-Art EPIC-Btm BiCMOS Design Significantly Reduces Power DissipationESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17Typical VOLP (Output Ground Bounce...
SN74ABT841A: Features: State-of-the-Art EPIC-Btm BiCMOS Design Significantly Reduces Power DissipationESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R ...
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