Features: EPICTM (Enhanced-Performance Implanted CMOS) Submicron ProcessESD Protection Exceeds 2000 V Per Mil-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)Latch-Up Performance Exceeds 250 mA Per JEDEC Standard JESD-17Typical VOLP (Output Ground Bounce) < 0.8 V at ...
SN74LVC00: Features: EPICTM (Enhanced-Performance Implanted CMOS) Submicron ProcessESD Protection Exceeds 2000 V Per Mil-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)Latch-Up Per...
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EPICTM (Enhanced-Performance Implanted CMOS) Submicron Process
ESD Protection Exceeds 2000 V Per Mil-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
Latch-Up Performance Exceeds 250 mA Per JEDEC Standard JESD-17
Typical VOLP (Output Ground Bounce) < 0.8 V at VCC = 3.3 V, TA = 25°C
Typical VOHV (Output VOH Undershoot) > 2 V at VCC = 3.3 V, TA = 25°C
Inputs Accept Voltages to 5.5 V
Package Options Include Plastic Small-Outline (D), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages

This quadruple 2-input positive-NAND gate is designed for 2.7-V to 3.6-V VCC operation. The SN74LVC00 performs the Boolean functions Y = A • B or Y = A + B in positive logic.
SN74LVC00 Inputs can be driven from either 3.3-V or 5-V devices. This feature allows the use of these devices as translators in a mixed 3.3-V/5-V system environment.
The SN74LVC00 is characterized for operation from 40°C to 85°C.