Features: • High Output IP3: 32.5 dBm @ 850 MHz• Cascadable 50 Ohm Gain Block• Patented GaAs HBT Technology• Operates From Single SupplyApplication• Cellular, PCS, CDPD, Wireless Data, SONETDescriptionStanford Microdevices' SNA-586 is a high performance Gallium Arseni...
SNA-586: Features: • High Output IP3: 32.5 dBm @ 850 MHz• Cascadable 50 Ohm Gain Block• Patented GaAs HBT Technology• Operates From Single SupplyApplication• Cellular, PCS, CDPD...
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Stanford Microdevices' SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm.
These unconditionally stable amplifiers SNA-586 provide 18 dB of gain and 18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.