Features: • Cascadable 50 Ohm Gain Block• 11dB Gain, +18dBm P1dB• High Linearity, +36dBm TOIP Typ.• 1.5:1 Input and Output VSWR• Operates From a Single DC Supply• Low Cost Stripline Mount Ceramic PackageApplication• Narrow and Broadband Linear Amplifiers...
SNA-676: Features: • Cascadable 50 Ohm Gain Block• 11dB Gain, +18dBm P1dB• High Linearity, +36dBm TOIP Typ.• 1.5:1 Input and Output VSWR• Operates From a Single DC Supply•...
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|
Parameter |
Absolute M aximum |
|
Device Current |
100mA |
|
Power D issipation |
560mW |
|
RF Input Power |
200mW |
|
Junction Temperature |
+200C |
|
Operating Temperature |
-45C to +85C |
|
Storage Temperature |
-65C to +150C |
Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor (MMIC) housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6.5 GHz.
These unconditionally stable amplifiers SNA-676 provide 11dB of gain and +18dBm of P1dB when biased at 5.7V and 70mA. This MMIC requires only a single suply voltage. The use of an external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and 5000 devices per reel.