SP8M3TB

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.051 Ohms
Package / Case : SOP-8
Continuous Drain Current : +/- 5 A, +/- 4.5 A


Parameters:

Technical/Catalog Information	SP8M3TB
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5A, 4.5A
Rds On (Max) @ Id, Vgs	51 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	230pF @ 10V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	3.9nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SP8M3TB SP8M3TB SP8M3TBDKR ND SP8M3TBDKRND SP8M3TBDKR