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SPA06N60C3

MOSFET COOL MOS N-CH 650V 6.2A

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SeekIC No. : 00148913 Detail

SPA06N60C3: MOSFET COOL MOS N-CH 650V 6.2A

SPA06N60C3 Data Sheet

floor Price/Ceiling Price

US $ .61~1.08 / Piece | Get Latest Price
Part Number:
SPA06N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.08
  • $.86
  • $.78
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
ID
T C=25 
6.2
A
T C=100
3.9
Pulsed drain current1)
ID,pulse
T C=25
18.6
Avalanche energy, single pulse
EAS
ID=3.1 A, VDD=50 V
200
mJ
Avalanche energy, repetitive t AR 1),2)
EAR
ID=6.2 A, VDD=50 V
0.5
Avalanche current, repetitive t AR 1)
IAR
6.2
A
Drain source voltage slope
dv /dt
ID=6.2 A, VDS=480 V,
T j=125
50
V/ns
Gate source voltage
VGS
static
±20
V
VGS
AC (f >1 Hz)
±30
Power dissipation
Ptot
T C=25 
32
W
Operating and storage temperature
Tj, Tstg
-55 ... 150




Parameters:

Technical/Catalog InformationSPA06N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C6.2A
Rds On (Max) @ Id, Vgs750 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds 620pF @ 25V
Power - Max32W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPA06N60C3
SPA06N60C3
SPA06N60C3IN ND
SPA06N60C3INND
SPA06N60C3IN



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