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SPB07N60C3

MOSFET COOL MOS N-CH 650V 7.3A

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SeekIC No. : 00149610 Detail

SPB07N60C3: MOSFET COOL MOS N-CH 650V 7.3A

SPB07N60C3 Data Sheet

floor Price/Ceiling Price

US $ .73~1.16 / Piece | Get Latest Price
Part Number:
SPB07N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.16
  • $1.01
  • $.86
  • $.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.6 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 7.3
4.6		 7.31)
4.61)		 A
Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A
Avalanche energy, single pulse
ID=5.5A, VDD=50V		 EAS 230 230 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V		 EAR 0.5 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 7.3 A
Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 83 32 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C		 dv/dt 50 V/ns



Parameters:

Technical/Catalog InformationSPB07N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 25V
Power - Max83W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPB07N60C3
SPB07N60C3
SPB07N60C3INTR ND
SPB07N60C3INTRND
SPB07N60C3INTR



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