FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Power - Max: 50W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25° C: 10.3A
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: P-TO263-3
Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Input Capacitance (Ciss) @ Vds: 444pF @ 25V
Parameters: | Technical/Catalog Information | SPB10N10L |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Rds On (Max) @ Id, Vgs | 154 mOhm @ 8.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 444pF @ 25V |
| Power - Max | 50W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB10N10L
SPB10N10L
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SPB10N10L Data Sheet
