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SPB16N50C3

MOSFET COOL MOS N-CH 650V 20.7A

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SeekIC No. : 00149091 Detail

SPB16N50C3: MOSFET COOL MOS N-CH 650V 20.7A

SPB16N50C3 Data Sheet

floor Price/Ceiling Price

US $ 1.15~1.74 / Piece | Get Latest Price
Part Number:
SPB16N50C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.74
  • $1.39
  • $1.27
  • $1.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 16 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 16
10		 161)
101)		 A
Pulsed drain current, tp limited by Tjmax ID puls 48 48 A
Avalanche energy, single pulse
ID=8A, VDD=50V		 EAS 460 460 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V		 EAR 0.64 0.64
Avalanche current, repetitive tAR limited by Tjmax IAR 16 16 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 160 34 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 400 V, ID = 16 A, Tj = 125 °C		 dv/dt 50 V/ns



Parameters:

Technical/Catalog InformationSPB16N50C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs280 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 25V
Power - Max160W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB16N50C3
SPB16N50C3
SPB16N50C3INDKR ND
SPB16N50C3INDKRND
SPB16N50C3INDKR



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