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SPB20N60C2

Features: • New revolutionary high voltage technology• Worldwide best RDS(on) in TO 220• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitancesSpecifications Parameter Symbol Value Unit SPP_B SPA Con...

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SPB20N60C2: Features: • New revolutionary high voltage technology• Worldwide best RDS(on) in TO 220• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ult...

SPB20N60C2 Data Sheet

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Part Number:
SPB20N60C2
Supply Ability:
5000

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Upload time: 2024/4/26

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 20
13		 201)
131)		 A
Pulsed drain current, tp limited by Tjmax ID puls 40 40 A
Avalanche energy, single pulse
ID=10A, VDD=50V		 EAS 690 690 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V		 EAR 1 1
Avalanche current, repetitive tAR limited by Tjmax IAR 20 20 A
Reverse diode dv/dt
IS = 20 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C		 dv/dt 6 6 V/ns
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 208 34.5 W
Operating and storage temperature Tj , Tstg -55...+150 °C



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