FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 83W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 42A
Gate Charge (Qg) @ Vgs: 30.5nC @ 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: P-TO263-3
Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 2V @ 37µA
Input Capacitance (Ciss) @ Vds: 1130pF @ 25V
Features: • N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Avalanche rated
• dv /dt ratedSpecifications
| Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current1)
|
ID |
TC=25 °C |
42 |
A |
| TC=100 °C |
42 |
Pulsed drain current
|
ID puls |
TC=25 °C |
248 |
Avalanche energy, single pulse
|
EAS |
ID=42 A, RGS=25 |
110 |
mJ |
| Repetitive avalanche energy |
EAR |
limited by T jmax2)
|
8 |
mJ |
Reverse diode dv/dt
|
dv/dt |
ID=42 A, VDS=24 V,
di /dt =200 A/s,
T j,max=175 °C |
6 |
kV/s |
| Gate source voltage |
VGS |
|
±20 |
V |
Power dissipation
|
Ptot |
TC=25 °C |
83 |
W |
| Operating and storage temperature |
Tj , Tstg |
|
-55 ... 175 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
|
1) Current is limited by bondwire; with an RthJC=1.8 K/W the chip is able to carry 64 A at 25°C, for detailed information
see app.-note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test
Parameters: | Technical/Catalog Information | SPB42N03S2L-13 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Rds On (Max) @ Id, Vgs | 12.6 mOhm @ 21A, 10V |
| Input Capacitance (Ciss) @ Vds | 1130pF @ 25V |
| Power - Max | 83W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 30.5nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB42N03S2L 13
SPB42N03S2L13
SPB42N03S2L13INCT ND
SPB42N03S2L13INCTND
SPB42N03S2L13INCT
|
SPB42N03S2L-13 Data Sheet
