Purchase SPB80N04S2-H4, In-stock SPB80N04S2-H4 From SeekIC.
MFG:infineon Package Cooled:P-TO263-3-2 D/C:09+
Part Number: SPB80N04S2-H4
MFG: infineon
Package Cooled: P-TO263-3-2
D/C: 09+
- Table of contents:
SPB80N04S2-H4
-
Suppliers
DataSheet
General Description
SPB80N04S2-H4 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 660 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 25 | |
| Reverse diode dv/dt IS = 80 A, VDS = 32 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
SPB80N04S2-H4 Features
· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
SPB80N04S2-H4
PDF/DataSheet Download
- Datasheet: SPB80N04S2-H4
- File Size: 425645 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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