SPB80P06P

MOSFET P-CH 60V 80A D2PAK

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SeekIC No. : 003433117 Detail

SPB80P06P: MOSFET P-CH 60V 80A D2PAK

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Part Number:
SPB80P06P
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 60V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) @ Vgs: 173nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5033pF @ 25V
Power - Max: 340W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25° C: 80A
Power - Max: 340W
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) @ Vgs: 173nC @ 10V
Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Input Capacitance (Ciss) @ Vds: 5033pF @ 25V


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature



Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID -80
-64
A
Pulsed drain current
TC = 25 °C
ID puls -320
Avalanche energy, single pulse
ID =-80A, VDD = -25 V, RGS = 25
EAS 823 mJ
Avalanche energy, periodic limited by Tjmax EAR 34
Reverse diode dv/dt
IS = -80 A, VDS = -48 , di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 340 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56

1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A




Parameters:

Technical/Catalog InformationSPB80P06P
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs23 mOhm @ 64A, 10V
Input Capacitance (Ciss) @ Vds 5033pF @ 25V
Power - Max340W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs173nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPB80P06P
SPB80P06P



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