MOSFET P-CH 60V 80A D2PAK
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| Series: | SIPMOS® | Manufacturer: | Infineon Technologies | ||
| FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
| Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
| Drain to Source Voltage (Vdss): | 60V | Continuous Drain Current : | 15 A | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 80A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 64A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 4V @ 5.5mA | Gate Charge (Qg) @ Vgs: | 173nC @ 10V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 5033pF @ 25V | ||
| Power - Max: | 340W | Mounting Type: | Surface Mount | ||
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Supplier Device Package: | PG-TO263-3 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C, 1) TC = 100 °C |
ID | -80 -64 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -320 | |
| Avalanche energy, single pulse ID =-80A, VDD = -25 V, RGS = 25 |
EAS | 823 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 34 | |
| Reverse diode dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 340 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A
| Technical/Catalog Information | SPB80P06P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 64A, 10V |
| Input Capacitance (Ciss) @ Vds | 5033pF @ 25V |
| Power - Max | 340W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 173nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB80P06P SPB80P06P |