Features: · Worldwide best RDS(on) in TO 220· N-Channel· Enhancement mode· Ultra low gate charge· Avalanche rated· dv/dt rated· 150°C operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage VDSS 600 V Continuous drain currentTC = 25 , TC = 100 ID...
SPBX1N60S5: Features: · Worldwide best RDS(on) in TO 220· N-Channel· Enhancement mode· Ultra low gate charge· Avalanche rated· dv/dt rated· 150°C operating temperatureSpecifications Parameter Symbol Va...
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Features: `N-Channel`Enhancement mode` Ultra low gate charge` Avalanche rated`dv/dt rated` 150oper...
Features: ` N-Channel` Enhancement mode` Ultra low gate charge` Avalanche rated` dv/dt rated` 150 ...
| Parameter | Symbol |
Value |
Unit |
| Drain source voltage | VDSS |
600 |
V |
| Continuous drain current TC = 25 , TC = 100 |
ID |
20.7 13.1 |
A |
| Pulsed drain current TC = 25 |
ID puls |
42 | |
| Avalanche energy, single pulse ID =20.7 A, VDD = 50 V, RGS = 25 |
EAS |
690 |
mJ |
| Avalanche current,periodic limited by Tjmax | IAR |
tbd |
A |
| Avalanche energy (10 kHz, limited by Tjmax) | EAR |
tbd |
mJ |
| Reverse diode dv/dt IS =20.7 A, VDS<VDSS, di/dt = 100 A/s, Tjmax =150 |
dv/dt |
6 |
kV/s |
| Gate source voltage | VGS |
±20 |
V |
| Power dissipation TC = 25 | Ptot |
120 |
W |
| Operating temperature | Tj |
-55 ...+150 |
|
| Storage temperature | Tstg |
-55 ...+150 | |
| IEC climatic category; DIN IEC 68-1 |
55/150/56 |