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SPBX4N60S5

Features: ` N-Channel` Enhancement mode` Ultra low gate charge` Avalanche rated` dv/dt rated` 150 operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage VDSS 600 V Continuous drain currentTC = 25 TC = 100 ID 3.22 A Pulsed drain current T...

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SPBX4N60S5: Features: ` N-Channel` Enhancement mode` Ultra low gate charge` Avalanche rated` dv/dt rated` 150 operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage V...

SPBX4N60S5 Data Sheet

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Part Number:
SPBX4N60S5
Supply Ability:
5000

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Upload time: 2025/12/24

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Product Details

Description



Features:

` N-Channel
` Enhancement mode
` Ultra low gate charge
` Avalanche rated
` dv/dt rated
`  150 operating temperature


Specifications

Parameter Symbol
Value
 Unit
Drain source voltage VDSS
600
 V
Continuous drain current
TC = 25   TC = 100 		ID
3.2
2
 A
Pulsed drain current TC = 25 ID puls
6.4
Avalanche energy, single pulse
ID =3.2 A, VDD = 50 V, RGS = 25		 EAS
100
 mJ
Avalanche current,periodic limited byTjmax IAR
tbd
 A
Avalanche energy (10 kHz, limited byT jmax) EAR
tbd
 mJ
Reverse diode dv/dt
IS =3.2 A, VDS<VDSS, di/dt = 100 A/s,
Tjmax =150		 dv/dt
6
 kV/s
Gate source voltage VGS
±20
 V
Power dissipation TC = 25 Ptot
38
 W
Operating temperature Tj
-55 ...+150
Storage temperature Tstg
-55 ...+150
IEC climatic category; DIN IEC 68-1  
40/150/56
  



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