SPD04N50C3T

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 4.5A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Power - Max: 50W
Packaging: Cut Tape (CT)
Series: CoolMOS™
Input Capacitance (Ciss) @ Vds: 470pF @ 25V
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO252-3
Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Drain to Source Voltage (Vdss): 560V


Parameters:

Technical/Catalog Information	SPD04N50C3T
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD04N50C3T SPD04N50C3T SPD04N50C3XTINCT ND SPD04N50C3XTINCTND SPD04N50C3XTINCT