SPD04N80C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Package / Case : TO-252
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.3 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	4 2.5	A
Pulsed drain current, tp limited by Tjmax	ID puls	12
Avalanche energy, single pulse ID=0.8A, VDD=50V	EAS	170	mJ
Avalanche energy, repetitive tAR limited by Tjmax1) ID=4A, VDD=50V	EAR	0.1
Avalanche current, repetitive tAR limited by Tjmax	IAR	4	A
Gate source voltage	VGS	±20	V
Power dissipation, TC = 25°C	Ptot	63	W
Operating and storage temperature	Tj , Tstg	-55...+150	°C
Drain Source voltage slope VDS =640V, ID =4 A, Tj = 125 °C	dv/dt	50	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

Description

The SPD04N80C3 is designed as one kind of cool MOS power transistors.

SPD04N80C3 has six features. (1)New revolutionary high voltage technology. (2)Ultra low gate charge. (3)Periodic avalanche rated. (4)Extreme dv/dt rated. (5)Ultra low effective capacitances. (6)Improved transconductance. Those are all the main features.

SPD04N80C3 Some absolute maximum ratings have been concluded into several points as follow. (1)Its continuous drain current would be 4A at Tc=25°C and would be 2.5A at Tc=100°C. (2)Its pulsed drain current, tp limited by Tjmax would be 12A. (3)Its avalanche energy, single pulse Id=0.8A and Vdd=50V would be 170mJ. (4)Its avalanche energy, repetitive tAR limited by Tjmax Id=4A and Vdd=50V would be 0.1mJ. (5)Its avalanche current repetitive tAR limited by Tjmax would be 4A. (6)Its gate source voltage would be +/-20V. (7)Its power dissipation would be 63W. (8)Its operating temperature range would be from -55°C to 150°C. (9)Its storage temperature range would be from -55°C to 150°C. (10)Its drain source voltage slope would be 50V/ns. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also SPD04N80C3 some electrical characteristics are concluded as follow. (1)Its drain to source breakdown voltage would be min 800V. (2)Its drain to source avalanche breakdown voltage would be typ 870V. (3)Its gate threshold voltage would be min 2.1V and typ 3V and max 3.9V. (4)Its zero gate voltage drain current would be typ 0.5uA and max 10uA at Tj=25°C and would be max 100uA at Tj=150°C. (5)Its gate to source leakage current would be max 100nA. (6)Its drain to source on-state resistance would be typ 1.1ohms and max 1.3ohms at Tj=25°C and would be typ 3ohms at Tj=150°C. And so on. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!

Parameters:

Technical/Catalog Information	SPD04N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 25V
Power - Max	63W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD04N80C3 SPD04N80C3 SPD04N80C3INTR ND SPD04N80C3INTRND SPD04N80C3INTR