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SPD07N60C2

Features: • New revolutionary high voltage technology• Worldwide best RDS(on) in TO-251 and TO-252• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Improved noise immunitySpecifications Parameter...

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SPD07N60C2: Features: • New revolutionary high voltage technology• Worldwide best RDS(on) in TO-251 and TO-252• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated...

SPD07N60C2 Data Sheet

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SPD07N60C2
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Product Details

Description



Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 7.3
4.6		 A
Pulsed drain current, tp limited by Tjmax ID puls 14.6
Avalanche energy, single pulse
ID=5.5A, VDD=50V		 EAS 230 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.3A, VDD=50V		 EAR 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A
Reverse diode dv/dt
IS=7.3A, VDS < VDD, di/dt=100A/s, Tjmax=150°C		 dv/dt 6 V/ns
Gate source voltage VGS ±20 V
Power dissipation, TC = 25°C Ptot 83 W
Operating and storage temperature Tj , Tstg -55...+150 °C

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




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