Features: · N channel· Enhancement mode· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °CTC = 100 °C ID 8.45.4 A Pulsed drain currentTC = 25 °C ID puls 33.6 Avalanche energy, single pulseID =8.4A, VDD = 25 V, RGS = 25 ...
SPD08N10: Features: · N channel· Enhancement mode· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °CTC = 100 °C ID 8.45.4 A Pulsed drai...
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Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche r...
· N channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 8.4 5.4 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 33.6 | |
| Avalanche energy, single pulse ID =8.4A, VDD = 25 V, RGS = 25 |
EAS | 30 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 4 | |
| Reverse diode dv/dt IS =8.4 A, VDS =80V, di/dt = 200 A/s, |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 40 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |