MOSFET P-CH 60V 9.7A
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Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche r...
| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 9.7 A | ||
| Resistance Drain-Source RDS (on) : | 400 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252 | Packaging : | Reel |
· P-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | -9.7 -6.8 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -38.8 | |
| Avalanche energy, single pulse ID =-9.7A, VDD = -25 V, RGS = 25 |
EAS | 70 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 4.2 | |
| Reverse diode dv/dt IS =-9.7 A, VDS =-25V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 42 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | SPD09P06PL |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 9.7A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 6.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 450pF @ 25V |
| Power - Max | 42W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD09P06PL SPD09P06PL SPD09P06PLINCT ND SPD09P06PLINCTND SPD09P06PLINCT |