MOSFET N-CH 55V 30A DPAK
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| Series: | OptiMOS™ | Manufacturer: | Infineon Technologies | ||
| FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
| Current - Collector (Ic) (Max): | - | FET Feature: | Logic Level Gate | ||
| Drain to Source Voltage (Vdss): | 55V | Continuous Drain Current : | 15 A | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 30A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 13A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 2V @ 26µA | Gate Charge (Qg) @ Vgs: | 24nC @ 10V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 790pF @ 25V | ||
| Power - Max: | 68W | Mounting Type: | Surface Mount | ||
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | P-TO252-3 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C |
ID | 30 22 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 120 | |
| Avalanche energy, single pulse ID =26A, VDD = 25 V, RGS = 25 |
EAS | 80 | mJ |
| Repetitive avalanche energy, limited by Tjmax1) | EAR | 5 | |
| Reverse diode dv/dt IS =26A, VDS =44V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 68 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | SPD26N06S2L-35 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
| Power - Max | 68W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 24nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPD26N06S2L 35 SPD26N06S2L35 |