Position: Home  > All Categories> Integrated Circuits (ICs) > SPD30N03S2L-07

SPD30N03S2L-07

MOSFET N-CH 30V 30A

product image

SPD30N03S2L-07 Picture
See larger image
SeekIC No. : 00160980 Detail

SPD30N03S2L-07: MOSFET N-CH 30V 30A

SPD30N03S2L-07 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SPD30N03S2L-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 6.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 6.7 m Ohms


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C		 ID 30
30		 A
Pulsed drain current
TC = 25 °C		 ID puls 120
Avalanche energy, single pulse
ID =30A, VDD = 25 V, RGS = 25		 EAS 250 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 13
Reverse diode dv/dt
IS =30 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C		 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 136 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.


Parameters:

Technical/Catalog InformationSPD30N03S2L-07
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs6.7 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2530pF @ 25V
Power - Max136W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs68nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD30N03S2L 07
SPD30N03S2L07
SPD30N03S2L07INCT ND
SPD30N03S2L07INCTND
SPD30N03S2L07INCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Tapes, Adhesives
803
AC452-2
Cables, Wires
821-0814-a
415-0100-150
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
RF and RFID
X3C26P1-30S
1P620S
Prototyping Products
AVT4168
DE1
View more