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SPD30N03S2L-20

MOSFET N-CH 30V 30A

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SPD30N03S2L-20: MOSFET N-CH 30V 30A

SPD30N03S2L-20 Data Sheet

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Part Number:
SPD30N03S2L-20
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 20 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 20 m Ohms


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C		 ID 30
30		 A
Pulsed drain current
TC = 25 °C		 ID puls 120
Avalanche energy, single pulse
ID =30A, VDD = 25 V, RGS = 25		 EAS 70 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 6
Reverse diode dv/dt
IS =30 A, VDS =-V, di/dt = 200 A/s,Tjmax=175°C		 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 60 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56

1 Current limited by bondwire ; with an RthJC = 2.5/W the chip is able to carry ID= 43A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test




Parameters:

Technical/Catalog InformationSPD30N03S2L-20
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs20 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max60W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD30N03S2L 20
SPD30N03S2L20
SPD30N03S2L20INCT ND
SPD30N03S2L20INCTND
SPD30N03S2L20INCT



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