SPD30N03S2L10T

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 30A
Power - Max: 100W
Input Capacitance (Ciss) @ Vds: 1550pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TO252-3
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) @ Vgs: 41.8nC @ 10V


Parameters:

Technical/Catalog Information	SPD30N03S2L10T
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	10 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1550pF @ 25V
Power - Max	100W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	41.8nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD30N03S2L10T SPD30N03S2L10T