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SPD50N06S2-14

Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain current1)TC = 25 °C ID 5048 A Pulsed drain currentTC = 25 °C ID puls 200 Avalanche energy, single pulseID =50A, VDD = ...

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SPD50N06S2-14: Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain current1)TC = 25 °C ID 5048...

SPD50N06S2-14 Data Sheet

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SPD50N06S2-14
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5000

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Product Details

Description



Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter Symbol Value Unit
Continuous drain current1)
TC = 25 °C
 ID 50
48		 A
Pulsed drain current
TC = 25 °C		 ID puls 200
Avalanche energy, single pulse
ID =50A, VDD = 25 V, RGS = 25		 EAS 240 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 13.6
Reverse diode dv/dt
IS =50 A, VDS =44V, di/dt = 200 A/s,Tjmax=175°C		 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 136 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 67A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test




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