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SPI80N04S2-H4

Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain current 1)TC = 25 °C ID 8080 A Pulsed drain currentTC = 25 °C ID puls 320 Avalanche energy, single pulseID =80A, VDD =...

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SPI80N04S2-H4: Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain current 1)TC = 25 °C ID 808...

SPI80N04S2-H4 Data Sheet

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Part Number:
SPI80N04S2-H4
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5000

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Product Details

Description



Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C
 ID 80
80		 A
Pulsed drain current
TC = 25 °C		 ID puls 320
Avalanche energy, single pulse
ID =80A, VDD = 25 V, RGS = 25		 EAS 660 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 25
Reverse diode dv/dt
IS = 80 A, VDS = 32 , di/dt = 200 A/s,
Tjmax = 175 °C
 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 300 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test




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