SPN03N60C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 0.7 A
Resistance Drain-Source RDS (on) : 1400 mOhms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA = 25 °C TA = 70 °C	ID	0.7 0.4	A
Pulsed drain current,tp limited by Tjmax TA = 25 °C	ID puls	3
Avalanche current, repetitive tAR limited by Tjmax	IAR	3.2
Gate source voltage	VGS	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30
Power dissipation,TA = 25°C	Ptot	1.8	W
Operating and storage temperature	Tj , Tstg	-55... +150	°C

Parameters:

Technical/Catalog Information	SPN03N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	700mA
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPN03N60C3 SPN03N60C3