Features: • New revolutionary high voltage technology• Worldwide best RDS(on) in SOT 223• Ultra low gate charge• Extreme dv/dt rated• Ultra low effective capacitances• Improved noise immunitySpecifications Parameter Symbol Value Unit Continuous ...
SPN04N60C2: Features: • New revolutionary high voltage technology• Worldwide best RDS(on) in SOT 223• Ultra low gate charge• Extreme dv/dt rated• Ultra low effective capacitances...
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Features: · New revolutionary high voltage technology· Ultra low gate charge· Extreme d v/d t rate...
Features: · New revolutionary high voltage technology· Ultra low gate charge· Extreme d v/d t rate...
• New revolutionary high voltage technology
• Worldwide best RDS(on) in SOT 223
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
| Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TA = 25 °C TA = 70 °C |
ID |
0.8 0.65 |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
3 | |
| Reverse diode dv/dt I S=0.8A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C |
dv/dt |
6 |
V/ns |
| Gate source voltage |
VGS |
±20 | |
| Power dissipation, TA = 25°C |
Ptot |
1.8 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |