SPN04N60S5

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 950 mOhms
Continuous Drain Current : 0.8 A


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in SOT 223
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA = 25 °C TA = 70 °C	ID	0.8 0.65	A
Pulsed drain current,tp limited by Tjmax TA = 25 °C	ID puls	3
Gate source voltage	VGS	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30
Power dissipation,TA = 25°C	Ptot	1.8	W
Operating and storage temperature	Tj , Tstg	-55... +150	°C

Parameters:

Technical/Catalog Information	SPN04N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	800mA
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPN04N60S5 SPN04N60S5