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SPN1012

Features: ·N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V·Super high density cell design for extremely low RDS (ON)·Exceptional on-resistance and maximum DC current capability·SOT-523 (SC-89) package designApplication·D...

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SeekIC No. : 004501272 Detail

SPN1012: Features: ·N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V·Super high density cell design for extremely low RDS (ON)·Exc...

SPN1012 Data Sheet

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Part Number:
SPN1012
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·N-Channel
   20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
   20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
   20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
·Super high density cell design for extremely low RDS (ON)
·Exceptional on-resistance and maximum DC current capability
·SOT-523 (SC-89) package design


Application

·Drivers : Relays/Solenoids/Lamps/Hammers
·Power Supply Converter Circuits
·Load/Power Switching Cell Phones, Pagers


Pinout

Connection Diagram


Specifications

Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGSS ±12 V
Continuous Drain Current(TJ=150 ) TA=25 ID 0.65 A
TA=70 0.45
Pulsed Drain Current IDM
 1.0 A
Continuous Source Current(Diode Conduction) IS 0.3 A
Power Dissipation TA=25 PD 0.27 W
TA=70 0.16
Operating Junction Temperature
 TJ -55/150
Storage Temperature Range TSTG -55/150



Description

The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.




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