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| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDSS | 600 | V |
| Continuous drain current1) TC = 25 °C TC = 100 °C |
ID | 0.85 0.5 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | tbd | |
| Avalanche energy, single pulse ID = 0.85 A, VDD = 50 V, RGS = 25 W |
EAS | 140 | mJ |
| Avalanche current (periodic, limited by Tjmax) | IAR | tbd | A |
| Avalanche energy (10 kHz, limited by Tjmax) | EAR | tbd | mJ |
| Reverse diode dv/dt IS = 0.85 A, VDS<VDSS, di/dt = 100 A/µs, Tjmax = 150 °C |
dv/dt | 6 | KV/µs |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation, TC = 25 °C | Ptot | 1.8 | W |
| Operating temperature | Tj | -55 ...+150 | °C |
| Storage temperature | Tstg | -55 ...+150 | |
| IEC climatic category; DIN IEC 68-1 | 55/150/56 |
SPNX6N60S5
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