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Part Number: SPNX6N60S5

 

 

 

 

 

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SPNX6N60S5 Maximum Ratings

Parameter Symbol Value Unit
Drain source voltage VDSS 600 V
Continuous drain current1)
TC = 25 °C
TC = 100 °C
ID 0.85
0.5
A
Pulsed drain current
TC = 25 °C
ID puls tbd
Avalanche energy, single pulse
ID = 0.85 A, VDD = 50 V, RGS = 25 W
EAS 140 mJ
Avalanche current (periodic, limited by Tjmax) IAR tbd A
Avalanche energy (10 kHz, limited by Tjmax) EAR tbd mJ
Reverse diode dv/dt
IS = 0.85 A, VDS<VDSS, di/dt = 100 A/µs,
Tjmax = 150 °C
dv/dt 6 KV/µs
Gate source voltage VGS ±20 V
Power dissipation, TC = 25 °C Ptot 1.8 W
Operating temperature Tj -55 ...+150 °C
Storage temperature Tstg -55 ...+150
IEC climatic category; DIN IEC 68-1   55/150/56  

SPNX6N60S5 Features

` Worldwide best RDS(on) in SOT 223
` N-Channel
` Enhancement mode
` Ultra low gate charge
` Avalanche rated
`dv/dt rated
` 150 operating temperature

SPNX6N60S5 datasheet

SPNX6N60S5
PDF/DataSheet Download

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