SPP06N60C3, US $ .69-.98 , Infineon Technologies, SPP06N60C3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146331 Detail

SPP06N60C3: MOSFET COOL MOS N-CH 650V 6.2A

SPP06N60C3 Data Sheet

US $ .69~.98 / Piece | Get Latest Price

Part Number:: SPP06N60C3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6.2 A
Resistance Drain-Source RDS (on) :	0.75 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms

Parameters:

Technical/Catalog Information	SPP06N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	750 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 25V
Power - Max	74W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP06N60C3 SPP06N60C3 SPP06N60C3IN ND SPP06N60C3INND SPP06N60C3IN

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SPP06N60C3

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