Position: Home  > All Categories> Integrated Circuits (ICs) > SPP08N80C3

SPP08N80C3

MOSFET COOL MOS N-CH 800V 8A

product image

SPP08N80C3 Picture
See larger image
SeekIC No. : 00146306 Detail

SPP08N80C3: MOSFET COOL MOS N-CH 800V 8A

SPP08N80C3 Data Sheet

floor Price/Ceiling Price

US $ 1~1.78 / Piece | Get Latest Price
Part Number:
SPP08N80C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.78
  • $1.43
  • $1.28
  • $1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.65 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.65 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 8
5.1		 81)
5.11)		 A
Pulsed drain current, tp limited by Tjmax ID puls 24 24 A
Avalanche energy, single pulse
ID=1.6A, VDD=50V		 EAS 340 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=8A, VDD=50V		 EAR 0.2 0.2
Avalanche current, repetitive tAR limited by Tjmax IAR 8 8 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 104 40 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 640 V, ID = 8 A, Tj = 125 °C		 dv/dt 50 V/ns

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPP08N80C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs650 mOhm @ 5.1A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 100V
Power - Max104W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP08N80C3
SPP08N80C3
SPP08N80C3IN ND
SPP08N80C3INND
SPP08N80C3IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Undefined Category
VI-B63-IU
X27 589
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Transformers
TM-09210
BV222-1-00992
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more