Position: Home  > All Categories> Integrated Circuits (ICs) > SPP08P06P

SPP08P06P

MOSFET P-CH 60V 8.8A

product image

SPP08P06P Picture
See larger image
SeekIC No. : 00160864 Detail

SPP08P06P: MOSFET P-CH 60V 8.8A

SPP08P06P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SPP08P06P
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.8 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Continuous Drain Current : 8.8 A


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating tempera


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID -8.8
-6.2		 A
Pulsed drain current
TC = 25 °C		 ID puls -35.2
Avalanche energy, single pulse
ID =-8.8 A, VDD = -25 V, RGS = 25		 EAS 70 mJ
Avalanche energy, periodic limited by Tjmax EAR 4.2
Reverse diode dv/dt
IS = -8.8 A, VDS = -48 V, di/dt = 200 A/s,
Tjmax = 175 °C		 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 42 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56



Parameters:

Technical/Catalog InformationSPP08P06P
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C8.8A
Rds On (Max) @ Id, Vgs300 mOhm @ 6.2A, 10V
Input Capacitance (Ciss) @ Vds 420pF @ 25V
Power - Max42W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP08P06P
SPP08P06P
SPP08P06PIN ND
SPP08P06PINND
SPP08P06PIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
LED Products
LM24P20
KCG057QV1DB-G770
Resistors
A101G
3006P-1-205LF
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more