Features: `-30V/-2.8A,RDS(ON)=120mΩ@VGS=- 10V`-30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V`-30V/-1.5A,RDS(ON)=165mΩ@VGS=-2.5V`-30V/-1.0A,RDS(ON)=195mΩ@VGS=-1.8V`Super high density cell design for extremely low RDS (ON)`Exceptional on-resistance and maximum DC current capability`SOT-3...
SPP1433A: Features: `-30V/-2.8A,RDS(ON)=120mΩ@VGS=- 10V`-30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V`-30V/-1.5A,RDS(ON)=165mΩ@VGS=-2.5V`-30V/-1.0A,RDS(ON)=195mΩ@VGS=-1.8V`Super high density cell...
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| Parameter | Symbol | Typical | Unit | |
| Drain-Source Voltage | VDSS | -30 | V | |
| Gate Source Voltage | VGSS | ±12 | V | |
| Continuous Drain Current(TJ=150 ) | TA=25 | ID | -2.2 | A |
| TA=70 | -1.7 | |||
| Pulsed Drain Current | IDM |
-8 | A | |
| Continuous Source Current(Diode Conduction) | IS | -1.4 | A | |
| Power Dissipation | TA=25 | PD | 0.95 | W |
| TA=70 | 0.51 | |||
| Operating Junction Temperature |
TJ | -55/150 | ||
| Storage Temperature Range | TSTG | -55/150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 105 | /W | |
The SPP1433A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices of the SPP1433Aare particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.