Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 600 V
Resistance Drain-Source RDS (on)
: 0.19 Ohms
Continuous Drain Current
: 20.7 A
Features: • New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)Specifications
| Parameter |
Symbol |
Value |
Unit |
| SPP_B_I |
SPA |
Continuous drain current
TC = 25 °C
TC = 100 °C |
ID |
20.7
13.1 |
20.71)
13.11) |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
62.1 |
62.1 |
A |
Avalanche energy, single pulse
ID=10A, VDD=50V |
EAS |
690 |
690 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V |
EAR |
1 |
1 |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
20 |
A |
| Gate source voltage static |
VGS |
±20 |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 |
±30 |
|
| Power dissipation, TC = 25°C |
Ptot |
208 |
34.5 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, Tj = 125 °C |
dv/dt |
50 |
V/ns |
DescriptionThe SPP20N60C3 is designed as one kind of cool MOS power transistor that has eight points of features:(1)worldwide best RDS(on) in TO 220;(2)improved transconductance;(3)P-TO-220-3-31: fully isolated package (2500 VAC; 1 minute);(4)new revolutionary high voltage technology;(5)extreme dv/dt rated;(6)ultra low gate charge;(7)high peak current capability;(8)periodic avalanche rated.
The absolute maximum ratings of the SPP20N60C3 can be summarized as:(1)continuous drain current Tc=25 °C:20.7 A;(2)continuous drain current Tc=100 °C:13.1 A;(3)pulsed drain current, tp limited by Tjmax:62.1 A;(4)avalanche energy, single pulse ID=10A, VDD=50V:690 mJ;(5)gate source voltage static:±20 V;(6)gate source voltage AC (f >1Hz):±30 V;(7)power dissipation, Tc=25°C:208 W;(8)operating and storage temperature:-55 to +150 °C;(9)drain source voltage slope:50 V/ns.
The electrical characteristics of the SPP20N60C3 can be summarized as:(1)drain-source breakdown voltage:600 V;(2)drain-source avalanche breakdown voltage:700 V;(3)gate threshold voltage:2.1 to 3.9 V;(4)gate-source leakage current:100 nA;(5)gate input resistance:0.54;(6)transconductance:17.5 S;(7)input capacitance:2400 pF;(8)output capacitance:780 pF;(9)reverse transfer capacitance:50 pF;(10)turn-on delay time:10 ns. If you want to know more information such as the electrical characteristics about the SPP20N60C3, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Parameters: | Technical/Catalog Information | SPP20N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 20.7A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 114nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP20N60C3
SPP20N60C3
SPP20N60C3IN ND
SPP20N60C3INND
SPP20N60C3IN
|
SPP20N60C3 Data Sheet
