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SPP20N60S5

MOSFET COOL MOS N-CH 600V 20A

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SeekIC No. : 00151374 Detail

SPP20N60S5: MOSFET COOL MOS N-CH 600V 20A

SPP20N60S5 Data Sheet

floor Price/Ceiling Price

US $ 1.42~1.53 / Piece | Get Latest Price
Part Number:
SPP20N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.53
  • $1.48
  • $1.45
  • $1.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.19 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 20
13		 A
Pulsed drain current, tp limited by Tjmax ID puls 40
Avalanche energy, single pulse
ID=10A, VDD=50V		 EAS 690 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V		 EAR 1
Avalanche current, repetitive tAR limited by Tjmax IAR 20 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 208 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C		 dv/dt 20 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPP20N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP20N60S5
SPP20N60S5
SPP20N60S5IN ND
SPP20N60S5INND
SPP20N60S5IN



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