Features: -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design ApplicationPower Management in Note book Portable Equipme...
SPP2301: Features: -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cur...
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-20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V
-20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Parameter |
Symbol |
Typical |
Unit | |
Drain-Source Voltage |
VDSS |
-20 |
V | |
Gate Source Voltage |
VGSS |
±12 |
V | |
Continuous Drain Current(TJ=150) | TA=25 |
ID |
-2.5 |
A |
TA=70 |
-1.5 | |||
Pulsed Drain Current |
IDM |
-10 |
A | |
Continuous Source Current(Diode Conduction) |
IS |
-1.6 |
A | |
Power Dissipation | TA=25 |
PD |
1.25 |
W |
TA=70 |
0.8 | |||
Operating Junction Temperature |
TJ |
150 |
| |
Storage Temperature Range |
TSTG |
-55/150 |
| |
Thermal Resistance-Junction to Ambient |
RJA |
120 |
/W |
The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices SPP2301 are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.