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SPP24N60C3

MOSFET COOL MOS N-CH 650V 24.3A

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SeekIC No. : 00148607 Detail

SPP24N60C3: MOSFET COOL MOS N-CH 650V 24.3A

SPP24N60C3 Data Sheet

floor Price/Ceiling Price

US $ 1.85~3.13 / Piece | Get Latest Price
Part Number:
SPP24N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.13
  • $2.51
  • $2.29
  • $1.85
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 24.3 A
Resistance Drain-Source RDS (on) : 0.16 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.16 Ohms
Continuous Drain Current : 24.3 A


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
24.3
15.4
A
Pulsed drain current, tp limited by Tjmax
ID puls
72.9
Avalanche energy, single pulse
ID=10A, VDD=50V
EAS
780
mJ
Avalanche energy, repetitive tAR limited by Tjmax1
ID=24.3A, VDD=50V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
24.3
A
Gate source voltage static
dv/dt
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, Tc=25°C
Ptot
240
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPP24N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C24.3A
Rds On (Max) @ Id, Vgs160 mOhm @ 15.4A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max240W
PackagingTube
Gate Charge (Qg) @ Vgs135nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP24N60C3
SPP24N60C3
SPP24N60C3IN ND
SPP24N60C3INND
SPP24N60C3IN



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