Purchase SPP35N10, In-stock SPP35N10 From SeekIC.
MFG:26521 Package Cooled:Infineon
- Table of contents:
SPP35N10
-
Suppliers
DataSheet
General Description
SPP35N10 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 35 26.4 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 140 | |
| Avalanche energy, single pulse ID =35 A, VDD = 25 V, RGS = 25 |
EAS | 245 | mJ |
| Reverse diode dv/dt IS =35 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 150 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
SPP35N10 Features
· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated
SPP35N10
PDF/DataSheet Download
- Datasheet: SPP35N10
- File Size: 492246 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
- ·SPP02N60C3
- INFINEON [Infineon Technologies AG]
- Cool MOS™ Power Transistor
- 289482 KB
- ·SPP02N60S5
- INFINEON [Infineon Technologies AG]
- Cool MOS⑩ Power Transistor
- 313771 KB
- ·SPP02N80C3
- INFINEON [Infineon Technologies AG]
- Cool MOS™ Power Transistor
- 268011 KB
- ·SPP03N60C3
- INFINEON [Infineon Technologies AG]
- Cool MOS™ Power Transistor
- 315633 KB
- ·SPP03N60S5
- INFINEON [Infineon Technologies AG]
- Cool MOS⑩ Power Transistor
- 315818 KB
- ·SPP04N50C3
- INFINEON [Infineon Technologies AG]
- Cool MOS™ Power Transistor
- 299719 KB
- ·SPP04N60C2
- INFINEON [Infineon Technologies AG]
- Cool MOS⑩ Power Transistor
- 168222 KB
- ·SPP04N60C3
- INFINEON [Infineon Technologies AG]
- Cool MOS™ Power Transistor
- 311904 KB
SPP35N10 Relative Products
SPP24N60CFD
MOSFET N-CH 650V 21.7A TO-220
SPP24N60C3
MOSFET N-CH 650V 24.3A TO-220
SPP2301
The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. These devices SPP2301 are parti...
SPP21N50C3
MOSFET N-CH 560V 21A TO-220AB
-
SPP21N10
MOSFET N-CH 100V 21A TO-220AB
SPP20N65C3
MOSFET N-CH 650V 20.7A TO-220
Hotspot Suppliers Product
100331DMQB
Price: 15-20 USD
triple D flip-flop, CDIP, -50mA
CAT25320YI-GT3
Price: 0.1-0.5 USD
TSSOP8, 32-Kb SPI serial, CMOS EEPROM
ZMM8V2ST
Price: 0.0001-0.0001 USD
silicon planar zener diode, LL-34, 500mW, 100mA, 1 V, ZMM8V2ST
TC9273N-007
Price: 5.5-6.5 USD
analog switch array IC, DIP-28, built-in 5V microcomputer interface, 10 analog switches*2 channels
P89C669FA
Price: 16.9-32 USD
8-bit, microcontroller, extended memory, PLCC-44
GAL22V10D-15LP
Price: 1.2-2.5 USD
E2CMOS PLD, DIP, -0.5 to +7V, high performance, active pull-ups
2N5172
Price: 0.1-2 USD
NPN General Purpose Amplifier, Package TO-92, No of Pins 3, Container, 25 Vdc Collector-Emitter Vo...
HCPL-3120-000E
Price: 0.9-1.5 USD
IGBT Gate Drive Optocoupler, 2.5A, 8-DIP, 3750Vrms, HCPL-3120-000E
AT89S52-24PU
Price: 1.6-2.5 USD
CMOS 8-bit microcontroller, DIP, -1.0V to +7.0V, low-power, high-performance
TOP227YN
Price: 0.1-10 USD
Off-line PWM Switch, TO220, 150W, 700V, 90 ~ 110kHz, TOP227YN, Power
FF300R12KE3
Price: 110-115 USD
IGBT-moulde, 1200 V, 300 A, 1450 W, 2.5 Ω, 21.0 nF, 400 nA
LF50CDT-TR
Price: 0.097-0.124 USD
Low Drop regulator, 5V, DPAK, 500 mA, 2.2 μF, LF50CDT-TR
