MOSFET P-CH 60V 80A
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
| Resistance Drain-Source RDS (on) : | 0.023 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C, 1) TC = 100 °C |
ID | -80 -64 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -320 | |
| Avalanche energy, single pulse ID =-80A, VDD = -25 V, RGS = 25 |
EAS | 823 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 34 | |
| Reverse diode dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 340 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A
| Technical/Catalog Information | SPP80P06P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 64A, 10V |
| Input Capacitance (Ciss) @ Vds | 5033pF @ 25V |
| Power - Max | 340W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 173nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP80P06P SPP80P06P SPP80P06PIN ND SPP80P06PINND SPP80P06PIN |