SPP80P06P

MOSFET P-CH 60V 80A

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SeekIC No. : 00161840 Detail

SPP80P06P: MOSFET P-CH 60V 80A

floor Price/Ceiling Price

Part Number:
SPP80P06P
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.023 Ohms


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature



Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID -80
-64
A
Pulsed drain current
TC = 25 °C
ID puls -320
Avalanche energy, single pulse
ID =-80A, VDD = -25 V, RGS = 25
EAS 823 mJ
Avalanche energy, periodic limited by Tjmax EAR 34
Reverse diode dv/dt
IS = -80 A, VDS = -48 , di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 340 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56

1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A




Parameters:

Technical/Catalog InformationSPP80P06P
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs23 mOhm @ 64A, 10V
Input Capacitance (Ciss) @ Vds 5033pF @ 25V
Power - Max340W
PackagingTube
Gate Charge (Qg) @ Vgs173nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP80P06P
SPP80P06P
SPP80P06PIN ND
SPP80P06PINND
SPP80P06PIN



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