Specifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °C, limited by bond wireTC = 100 °C ID 5236 A Pulsed drain currentTC = 25 °C ID puls 208 Avalanche energy, single pulseID = 46 A, VDD = 25 V, RGS = 25 W EAS 650 mJ Avalanche current,periodic limi...
SPPXXN10: Specifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °C, limited by bond wireTC = 100 °C ID 5236 A Pulsed drain currentTC = 25 °C ID puls 208 Avalanche en...
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Features: · Worldwide best RDS(on) in TO 220· N-Channel· Enhancement mode· Ultra low gate charge· ...
Features: `N-Channel`Enhancement mode` Ultra low gate charge` Avalanche rated`dv/dt rated` 150oper...
Features: ` N-Channel` Enhancement mode` Ultra low gate charge` Avalanche rated` dv/dt rated` 150 ...
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C, limited by bond wire TC = 100 °C |
ID | 52 36 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 208 | |
| Avalanche energy, single pulse ID = 46 A, VDD = 25 V, RGS = 25 W |
EAS | 650 | mJ |
| Avalanche current,periodic limited byT jmax | IAR | 52 | A |
| Avalanche energy,periodic limited byT j(max) | EAR | 17.5 | mJ |
| Reverse diode dv/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 175 | W |
| Operating temperature | Tj | 55 ... +175 | °C |
| Storage temperature | Tstg | -55 ... +175 | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |